13,674 research outputs found

    Low Voltage I-V Characteristics in Magnetic Tunnel Junctions

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    We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the ss band, can account for the low voltage current anomalies observed in magnet-oxide-magnet junctions. The anomalies can be positive, negative or have a mixed form, depending of the position of the Fermi level in the ss band, in agreement with observations. Magnon contribution is negligible small to account for the sharp drop of the magnetoresistance with the voltage bias.Comment: 8 pages, 3 postscript figure

    Emerging beam resonances in atom diffraction from a reflection grating

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    We report on the observation of emerging beam resonances, well known as Rayleigh-Wood anomalies and threshold resonances in photon and electron diffraction, respectively, in an atom-optical diffraction experiment. Diffraction of He atom beams reflected from a blazed ruled grating at grazing incidence has been investigated. The total reflectivity of the grating as well as the intensities of the diffracted beams reveal anomalies at the Rayleigh angles of incidence, i.e., when another diffracted beam merges parallel to the grating surface. The observed anomalies are discussed in terms of the classical wave-optical model of Rayleigh and Fano.Comment: 4 pages, 3 figure

    New mechanism for impurity-induced step bunching

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    Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown that the two types of gradients have opposing effects on the stability of the surface: Step bunching can be caused by impurities which either lower the adatom mobility, or increase the adatom chemical potential. In particular, impurities acting as random barriers (without affecting the adatom binding) cause step bunching, while for impurities acting as random traps the combination of the two effects reduces to a modification of the attachment boundary conditions at the steps. In this case attachment to descending steps, and thus step bunching, is favored if the impurities bind adatoms more weakly than the substrate.Comment: 7 pages, 3 figures. Substantial revisions and correction

    Current induced distortion of a magnetic domain wall

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    We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude due to the precession of the electrons' spins at the "Larmor" frequency. As a result, the profile of the domain wall is expected to get distorted by the current and acquires a periodic sur-structure.Comment: 5 pages, 3 eps figure

    OB Stars in the Solar Neighborhood I: Analysis of their Spatial Distribution

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    We present a newly-developed, three-dimensional spatial classification method, designed to analyze the spatial distribution of early type stars within the 1 kpc sphere around the Sun. We propose a distribution model formed by two intersecting disks -the Gould Belt (GB) and the Local Galactic Disk (LGD)- defined by their fundamental geometric parameters. Then, using a sample of about 550 stars of spectral types earlier than B6 and luminosity classes between III and V, with precise photometric distances of less than 1 kpc, we estimate for some spectral groups the parameters of our model, as well as single membership probabilities of GB and LGD stars, thus drawing a picture of the spatial distribution of young stars in the vicinity of the Sun.Comment: 28 pages including 9 Postscript figures, one of them in color. Accepted for publication in The Astronomical Journal, 30 January 200

    Nonlinear spin-polarized transport through a ferromagnetic domain wall

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    A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.Comment: 5 pages, 3 figure

    ϕ\phi meson transparency in nuclei from ϕN\phi N resonant interactions

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    We investigate the ϕ\phi meson nuclear transparency using some recent theoretical developments on the ϕ\phi in medium self-energy. The inclusion of direct resonant ϕN\phi N-scattering and the kaon decay mechanisms leads to a ϕ\phi width much larger than in most previous theoretical approaches. The model has been confronted with photoproduction data from CLAS and LEPS and the recent proton induced ϕ\phi production from COSY finding an overall good agreement. The results support the need of a quite large direct ϕN\phi N-scattering contribution to the self-energy
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